US Patent Application 18361555. METHOD FOR ETCHING ETCH LAYER simplified abstract
Contents
METHOD FOR ETCHING ETCH LAYER
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Manish Kumar Singh of Hsinchu City (TW)
Bo-Wei Chou of Hsinchu City (TW)
Jui-Ming Shih of Hsinchu City (TW)
Wen-Yu Ku of Hsinchu City (TW)
Ping-Jung Huang of Yunlin County (TW)
Pi-Chun Yu of Taipei City (TW)
METHOD FOR ETCHING ETCH LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361555 titled 'METHOD FOR ETCHING ETCH LAYER
Simplified Explanation
The patent application describes a method for controlling the temperature of a wafer during etching.
- The wafer is rotated while a liquid is dispensed from the center to the edge of the wafer.
- The liquid helps to regulate the temperature of the wafer.
- The etching process using an etchant is performed either during or after the liquid is dispensed.
- The liquid is dispensed through a nozzle.
Original Abstract Submitted
A method includes rotating a wafer, dispensing a liquid from a center of the wafer to a peripheral edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.
