US Patent Application 18361464. SEMICONDUCTOR DEVICE WITH FIN ISOLATION simplified abstract

SEMICONDUCTOR DEVICE WITH FIN ISOLATION

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chang-Yin Chen of Taipei City (TW)

Che-Cheng Chang of New Taipei City (TW)

Chih-Han Lin of Hsinchu City (TW)

SEMICONDUCTOR DEVICE WITH FIN ISOLATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361464 titled 'SEMICONDUCTOR DEVICE WITH FIN ISOLATION

Simplified Explanation

The patent application describes a semiconductor device with a semiconductor fin and a gate structure.

• The semiconductor fin extends from a substrate and has a first sidewall, a second opposing sidewall, an end surface, and a rounded first corner portion connecting the first sidewall and the end surface.
• The gate structure extends across the semiconductor fin.
• The first corner portion is more rounded than the first sidewall and the end surface.

Original Abstract Submitted

A semiconductor device includes a semiconductor fin extending from a substrate, and a gate structure extending across the semiconductor fin. From a plan view, the semiconductor fin includes a first sidewall, a second sidewall opposing the first sidewall, an end surface extending along a different direction than the first sidewall and the second sidewall, and a first corner portion connecting the first sidewall and the end surface. The first corner portion is more rounded than the first sidewall and the end surface.