US Patent Application 18361402. BOTTOM ANTIREFLECTIVE COATING MATERIALS simplified abstract

BOTTOM ANTIREFLECTIVE COATING MATERIALS

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chien-Chih Chen of Taipei City (TW)

Ching-Yu Chang of Yilang County (TW)

BOTTOM ANTIREFLECTIVE COATING MATERIALS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361402 titled 'BOTTOM ANTIREFLECTIVE COATING MATERIALS

Simplified Explanation

- The patent application describes a method for creating patterns on a substrate using a photoresist layer. - The method involves depositing an underlayer on the substrate, followed by the deposition of a photoresist layer. - A portion of the photoresist layer and underlayer are exposed to a radiation source according to a specific pattern. - The exposed layers are then baked and developed to transfer the pattern onto the photoresist layer. - The underlayer used in this method includes a polymer backbone, a polarity switchable group, a cross-linkable group, and a photoacid generator. - The polarity switchable group has a first end group bonded to the polymer backbone, a second end group with fluorine, and an acid labile group between them. - During the exposure step, the photoacid generator decomposes and generates an acidity moiety. - This acidity moiety detaches the second end group from the polymer backbone during the baking process. - This method allows for the creation of precise patterns on a substrate using a photoresist layer and an underlayer with a polarity switchable group.

Original Abstract Submitted

A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.