US Patent Application 18360618. LITHOGRAPHY PROCESS MONITORING METHOD simplified abstract
Contents
LITHOGRAPHY PROCESS MONITORING METHOD
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chih-Jie Lee of Taipei City (TW)
Shih-Chun Huang of Hsinchu City (TW)
Shih-Ming Chang of Hsinchu (TW)
Ken-Hsien Hsieh of Taipei City (TW)
Yung-Sung Yen of New Taipei City (TW)
Ru-Gun Liu of Hsinchu County (TW)
LITHOGRAPHY PROCESS MONITORING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360618 titled 'LITHOGRAPHY PROCESS MONITORING METHOD
Simplified Explanation
- The patent application describes a method for performing a lithography process. - The method involves using a test pattern consisting of sets of lines arranged at a specific pitch, with a reference line in between. - The test pattern is exposed to a radiation source with an asymmetric, monopole illumination profile. - This exposure forms a test pattern structure on a substrate. - The test pattern structure is then measured, and the measured distance is used to determine an offset of a lithography parameter. - The lithography process is adjusted based on this offset to improve the process.
Original Abstract Submitted
A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.
