US Patent Application 18360617. FINFET STRUCTURE WITH CONTROLLED AIR GAPS simplified abstract
Contents
FINFET STRUCTURE WITH CONTROLLED AIR GAPS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wen-Che Tsai of Hsinchu City (TW)
Min-Yann Hsieh of Kaohsiung City (TW)
Hua Feng Chen of Hsinchu City (TW)
Kuo-Hua Pan of Hsinchu City (TW)
FINFET STRUCTURE WITH CONTROLLED AIR GAPS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360617 titled 'FINFET STRUCTURE WITH CONTROLLED AIR GAPS
Simplified Explanation
The abstract describes an integrated circuit (IC) structure that includes two fins on a semiconductor substrate, separated by an isolation feature made of a dielectric material. There is also a contact feature between the fins that extends into the isolation feature, creating an air gap between them. The dielectric material extends from the substrate to the contact feature.
- IC structure with two fins on a semiconductor substrate
- Fins are separated by an isolation feature made of dielectric material
- Contact feature between the fins extends into the isolation feature
- Air gap is created between the isolation feature and the contact feature
- Dielectric material extends from the substrate to the contact feature
Original Abstract Submitted
The present disclosure provides an integrated circuit (IC) structure. The IC structure includes first and second fins formed on a semiconductor substrate and laterally separated from each other by an isolation feature, the isolation feature formed of a dielectric material that physically contacts the semiconductor substrate; and a contact feature between the first and second fins and extending into the isolation feature thereby defining an air gap vertically between the isolation feature and the contact feature, the dielectric material of the isolation feature extending from the semiconductor substrate to the contact feature.
