US Patent Application 18360445. CRITICAL DIMENSION UNIFORMITY simplified abstract

From WikiPatents
Jump to navigation Jump to search

CRITICAL DIMENSION UNIFORMITY

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chi-Ta Lu of Sanxing Township (TW)

Chi-Ming Tsai of Taipei City (TW)

CRITICAL DIMENSION UNIFORMITY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18360445 titled 'CRITICAL DIMENSION UNIFORMITY

Simplified Explanation

The patent application describes a method for fabricating a mask with a pattern layout.

  • The pattern layout is received and then shrunk to form a smaller pattern.
  • Centerlines are determined for each feature within the smaller pattern.
  • The centerlines are snapped to a grid that represents the minimum resolution size of a mask fabrication tool.
  • After snapping the centerlines to the grid, the mask is fabricated with the shrunk pattern.


Original Abstract Submitted

A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_18360445._CRITICAL_DIMENSION_UNIFORMITY_simplified_abstract&oldid=10589"