US Patent Application 18360030. PELLICLE DESIGN FOR MASK APPLICATION simplified abstract
Contents
PELLICLE DESIGN FOR MASK APPLICATION
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Yun-Yue Lin of Hsinchu City (TW)
PELLICLE DESIGN FOR MASK APPLICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360030 titled 'PELLICLE DESIGN FOR MASK APPLICATION
Simplified Explanation
The patent application describes an apparatus for a semiconductor lithography process.
- The apparatus includes a mask with a circuit pattern to be transferred.
- The apparatus also includes a pellicle attached to the mask, which has a pattern formed on its surface.
- An adhesive material layer is placed between the mask and the pellicle.
- The pattern on the pellicle includes multiple capillaries.
- Each capillary has a dimension between 1 µm and 500 µm in the plane of the pellicle's surface.
- Each capillary has a depth to width ratio of at least 100.
- The adhesive material layer uses an adhesive with a glass transition temperature greater than room temperature.
Original Abstract Submitted
The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 µm and about 500 µm. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (T) greater than room temperature.
