US Patent Application 18359695. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Cheng-Lung Hung of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359695 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The patent application describes a device with nanostructures on a substrate, including a channel region.
- Nanostructures are present on a substrate, forming a channel region.
- A gate dielectric layer wraps around each nanostructure.
- A first work function tuning layer is on the gate dielectric layer, consisting of a first n-type work function metal, aluminum, and carbon.
- The first n-type work function metal has a lower work function value than titanium.
- A glue layer is on the first work function tuning layer.
- A fill layer is on the glue layer.
Original Abstract Submitted
An embodiment includes a device having nanostructures on a substrate, the nanostructures including a channel region. The device also includes a gate dielectric layer wrapping around each of the nanostructures. The device also includes a first work function tuning layer on the gate dielectric layer, the first work function tuning layer including a first n-type work function metal, aluminum, and carbon, the first n-type work function metal having a work function value less than titanium. The device also includes a glue layer on the first work function tuning layer. The device also includes and a fill layer on the glue layer.
