US Patent Application 18359447. MULTIPLE-MASK MULTIPLE-EXPOSURE LITHOGRAPHY AND MASKS simplified abstract
Contents
MULTIPLE-MASK MULTIPLE-EXPOSURE LITHOGRAPHY AND MASKS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
MULTIPLE-MASK MULTIPLE-EXPOSURE LITHOGRAPHY AND MASKS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359447 titled 'MULTIPLE-MASK MULTIPLE-EXPOSURE LITHOGRAPHY AND MASKS
Simplified Explanation
The abstract of this patent application describes a lithographic technique that uses multiple masks and multiple exposures. It also mentions the use of suitable masks for this technique. The technique involves using a photomask that has a die area and a stitching region. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.
- The patent application describes a lithographic technique that uses multiple masks and multiple exposures.
- The technique involves using a photomask with a die area and a stitching region.
- The stitching region of the photomask includes a mask feature for forming an integrated circuit feature.
- The stitching region also includes an alignment mark for in-chip overlay measurement.
Original Abstract Submitted
Examples of a multiple-mask multiple-exposure lithographic technique and suitable masks are provided herein. In some examples, a photomask includes a die area and a stitching region disposed adjacent to the die area and along a boundary of the photomask. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.
