View source for US Patent Application 18359254. METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TRANSISTORS simplified abstract

=METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TRANSISTORS=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Feng-Ching Chu of Pingtung County (TW)|Feng-Ching Chu of Pingtung County (TW)]][[Category:Feng-Ching Chu of Pingtung County (TW)]]

[[:Category:Wei-Yang Lee of Taipei City (TW)|Wei-Yang Lee of Taipei City (TW)]][[Category:Wei-Yang Lee of Taipei City (TW)]]

[[:Category:Feng-Cheng Yang of Hsinchu County (TW)|Feng-Cheng Yang of Hsinchu County (TW)]][[Category:Feng-Cheng Yang of Hsinchu County (TW)]]

[[:Category:Yen-Ming Chen of Hsin-Chu County (TW)|Yen-Ming Chen of Hsin-Chu County (TW)]][[Category:Yen-Ming Chen of Hsin-Chu County (TW)]]

==METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TRANSISTORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18359254 titled 'METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TRANSISTORS

==Simplified Explanation==

The patent application describes a method for fabricating a fin-like field effect transistor (FinFET) device. 

* The method involves using a semiconductor substrate with separate regions for forming p-type metal-oxide-semiconductor (PMOS) devices and n-type metal-oxide-semiconductor (NMOS) devices. 
* Fin structures are formed in both regions of the substrate, with isolation features separating them. 
* The method then involves first forming source/drain (S/D) features in the PMOS region and subsequently forming S/D features in the NMOS region. 
* This sequence of steps results in a greater loss of isolation features in the PMOS region compared to the NMOS region.


==Original Abstract Submitted==

A method of fabricating a fin-like field effect transistor (FinFET) device includes providing a semiconductor substrate having a region for forming p-type metal-oxide-semiconductor (PMOS) devices and a region for forming n-type metal-oxide-semiconductor (PMOS) devices, forming fin structures in both regions of the substrate separated by isolation features, first forming source/drain (S/D) features in the PMOS region, and subsequently forming S/D features in the NMOS region. First forming the PMOS S/D features and then forming the NMOS S/D features results in a greater extent of loss of isolation features in the PMOS region than in the NMOS region.



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[[Category:H01L27/088]]
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