US Patent Application 18359254. METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TRANSISTORS simplified abstract

METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TRANSISTORS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Feng-Ching Chu of Pingtung County (TW)

Wei-Yang Lee of Taipei City (TW)

Feng-Cheng Yang of Hsinchu County (TW)

Yen-Ming Chen of Hsin-Chu County (TW)

METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359254 titled 'METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TRANSISTORS

Simplified Explanation

The patent application describes a method for fabricating a fin-like field effect transistor (FinFET) device.

• The method involves using a semiconductor substrate with separate regions for forming p-type metal-oxide-semiconductor (PMOS) devices and n-type metal-oxide-semiconductor (NMOS) devices.
• Fin structures are formed in both regions of the substrate, with isolation features separating them.
• The method then involves first forming source/drain (S/D) features in the PMOS region and subsequently forming S/D features in the NMOS region.
• This sequence of steps results in a greater loss of isolation features in the PMOS region compared to the NMOS region.

Original Abstract Submitted

A method of fabricating a fin-like field effect transistor (FinFET) device includes providing a semiconductor substrate having a region for forming p-type metal-oxide-semiconductor (PMOS) devices and a region for forming n-type metal-oxide-semiconductor (PMOS) devices, forming fin structures in both regions of the substrate separated by isolation features, first forming source/drain (S/D) features in the PMOS region, and subsequently forming S/D features in the NMOS region. First forming the PMOS S/D features and then forming the NMOS S/D features results in a greater extent of loss of isolation features in the PMOS region than in the NMOS region.