US Patent Application 18359011. METAL PLATE CORNER STRUCTURE ON METAL INSULATOR METAL simplified abstract
Contents
METAL PLATE CORNER STRUCTURE ON METAL INSULATOR METAL
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Yuan-Yang Hsiao of Taipei (TW)
Hsiao Ching-wen of Hsinchu (TW)
Yao-Chun Chuang of Hsinchu (TW)
METAL PLATE CORNER STRUCTURE ON METAL INSULATOR METAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359011 titled 'METAL PLATE CORNER STRUCTURE ON METAL INSULATOR METAL
Simplified Explanation
The patent application describes a metal-insulator-metal (MIM) structure and methods to reduce stress accumulation at the corners of conductor layers.
- The structure includes a substrate with an active semiconductor device.
- A stack of dielectric layers is placed over the substrate.
- A lower contact is positioned over the dielectric layers.
- A passivation layer is applied over the lower contact.
- The MIM structure is then formed over the passivation layer.
- The MIM structure consists of three conductor layers with insulator layers in between.
- The corners of the top conductor layer are rounded to reduce stress accumulation.
Original Abstract Submitted
A metal-insulator-metal (MIM) structure and methods of forming the same for reducing the accumulation of external stress at the corners of the conductor layers are disclosed herein. An exemplary device includes a substrate that includes an active semiconductor device. A stack of dielectric layers is disposed over the substrate. A lower contact is disposed over the stack of dielectric layers. A passivation layer is disposed over the lower contact. A MIM structure is disposed over the passivation layer, the MIM structure including a first conductor layer, a second conductor layer disposed over the first conductor layer, and a third conductor layer disposed over the second conductor layer. A first insulator layer is disposed between the first conductor layer and the second conductor layer. A second insulator layer is disposed between the second conductor layer and the third conductor layer. One or more corners of the third conductor layer are rounded.
