US Patent Application 18358757. SEMICONDUCTOR DEVICE WITH METAL GATE FILL STRUCTURE simplified abstract

SEMICONDUCTOR DEVICE WITH METAL GATE FILL STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chung-Liang Cheng of Hsinchu (TW)

SEMICONDUCTOR DEVICE WITH METAL GATE FILL STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18358757 titled 'SEMICONDUCTOR DEVICE WITH METAL GATE FILL STRUCTURE

Simplified Explanation

The patent application describes a semiconductor process system that uses a machine learning analysis model to etch gate metals on semiconductor wafers.

• The system utilizes a machine learning analysis model to select the optimal process conditions for the etching process.
• The analysis model dynamically adjusts the process conditions based on real-time data.
• The selected process conditions data is then used for the next etching process, improving efficiency and accuracy.
• The system aims to enhance the etching process by leveraging machine learning technology.
• The innovation enables the semiconductor process system to optimize the etching process and improve overall performance.

Original Abstract Submitted

A semiconductor process system etches gate metals on semiconductor wafers. The semiconductor process system includes a machine learning based analysis model. The analysis model dynamically selects process conditions for an etching process. The process system then uses the selected process conditions data for the next etching process.