US Patent Application 18357163. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu County (TW)
Chi-On Chui of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18357163 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor device and a method of forming it.
- The device includes a substrate, semiconductor nanosheets, a bottom dielectric layer, and a gate stack.
- The substrate has at least one fin.
- The semiconductor nanosheets are stacked on the fin.
- The bottom dielectric layer is vertically placed between the fin and the nanosheets.
- The gate stack wraps around the nanosheets.
- The projected area of the gate stack on the top surface of the substrate is within the projected area of the bottom dielectric layer on the top surface of the substrate.
Original Abstract Submitted
Provided are a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a plurality of semiconductor nanosheets, a bottom dielectric layer, and a gate stack. The substrate includes at least one fin. The plurality of semiconductor nanosheets are stacked on the at least one fin. The bottom dielectric layer is vertically disposed between the at least one fin and the plurality of semiconductor nanosheets. The gate stack wraps the plurality of semiconductor nanosheets. An area of the gate stack projected on a top surface of the substrate is within an area of the bottom dielectric layer projected on the top surface of the substrate.
