US Patent Application 18356911. Middle-Of-Line Interconnect Structure Having Air Gap And Method Of Fabrication Thereof simplified abstract

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Middle-Of-Line Interconnect Structure Having Air Gap And Method Of Fabrication Thereof

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Yi-Nien Su of Hsinchu City (TW)

Jyu-Horng Shieh of Hsin-Chu City (TW)

Middle-Of-Line Interconnect Structure Having Air Gap And Method Of Fabrication Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 18356911 titled 'Middle-Of-Line Interconnect Structure Having Air Gap And Method Of Fabrication Thereof

Simplified Explanation

The patent application describes a new type of interconnect for electronic devices that helps reduce capacitance and resistance.

  • The interconnect structure includes a device-level contact and a ruthenium structure.
  • The device-level contact physically connects to an integrated circuit feature.
  • The ruthenium structure physically connects to the device-level contact.
  • There is an air gap between the sidewalls of the ruthenium structure and the insulator layer.
  • The top surface of the ruthenium structure is lower than the top surface of the insulator layer.
  • A via in a third insulator layer connects to the ruthenium structure.
  • A dummy contact spacer layer separates the first and second insulator layers.


Original Abstract Submitted

Middle-of-line (MOL) interconnects that facilitate reduced capacitance and/or resistance and corresponding techniques for forming the MOL interconnects are disclosed herein. An exemplary MOL interconnect structure includes a device-level contact disposed in a first insulator layer and a ruthenium structure disposed in a second insulator layer disposed over the first insulator layer. The device-level contact physically contacts an integrated circuit feature, and the ruthenium structure physically contacts the device-level contact. An air gap separates sidewalls of the ruthenium structure from the second insulator layer. A top surface of the ruthenium structure is lower than a top surface of the second insulator layer. A via disposed in a third insulator layer extends below the top surface of the second insulator layer to physically contact the ruthenium structure. A remainder of a dummy contact spacer layer may separate the first insulator layer and the second insulator layer.

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