US Patent Application 18356831. Integrated 3DIC With Stacked Photonic Dies and Method Forming Same simplified abstract
Contents
Integrated 3DIC With Stacked Photonic Dies and Method Forming Same
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsing-Kuo Hsia of Jhubei City (TW)
Integrated 3DIC With Stacked Photonic Dies and Method Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356831 titled 'Integrated 3DIC With Stacked Photonic Dies and Method Forming Same
Simplified Explanation
The patent application describes a method for creating a photonic device using multiple layers of silicon and nitride waveguides.
- The method involves forming a first photonic die, which includes a silicon waveguide and a nitride waveguide.
- A through-via is created in the first photonic die, extending into multiple layers of dielectric material.
- A second photonic die is then bonded to the first photonic die, which includes a nitride waveguide.
- The silicon waveguide in the first die is optically connected to the nitride waveguide in the second die through the nitride waveguide in the first die.
- A second through-via is created in the second photonic die, extending into its own set of dielectric layers.
Original Abstract Submitted
A method includes forming a first photonic die, which includes forming a first silicon waveguide, and forming a first nitride waveguide. The method further includes forming a first through-via extending into a first plurality of dielectric layers in the first photonic die, and bonding a second photonic die to the first photonic die. The second photonic die includes a second nitride waveguide. The first silicon waveguide is optically coupled to the second nitride waveguide through the first nitride waveguide. A second through-via extends into a second plurality of dielectric layers in the second photonic die.
