US Patent Application 18356802. BACKSIDE PN JUNCTION DIODE simplified abstract
Contents
BACKSIDE PN JUNCTION DIODE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ching-Wei Tsai of Hsinchu City (TW)
Kuo-Ji Chen of Taipei County (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
BACKSIDE PN JUNCTION DIODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356802 titled 'BACKSIDE PN JUNCTION DIODE
Simplified Explanation
The present disclosure describes semiconductor devices with specific features and components. These devices include:
- An elongated semiconductor member surrounded by an isolation feature, extending in a specific direction.
- Two source/drain features located on the top surface of the elongated semiconductor member.
- A vertical stack of channel members connecting the two source/drain features along the same direction.
- A gate structure that wraps around each of the channel members.
- An epitaxial layer deposited on the bottom surface of the elongated semiconductor member.
- A silicide layer placed on top of the epitaxial layer.
- A conductive layer positioned on top of the silicide layer.
These features and components work together to create a semiconductor device with specific functionalities and performance characteristics.
Original Abstract Submitted
The present disclosure provides embodiments of semiconductor devices. A semiconductor device according to the present disclosure include an elongated semiconductor member surrounded by an isolation feature and extending lengthwise along a first direction, a first source/drain feature and a second source/drain feature over a top surface of the elongated semiconductor member, a vertical stack of channel members each extending lengthwise between the first source/drain feature and the second source/drain feature along the first direction, a gate structure wrapping around each of the channel members, an epitaxial layer deposited on the bottom surface of the elongated semiconductor member, a silicide layer disposed on the epitaxial layer, and a conductive layer disposed on the silicide layer.
