US Patent Application 18356710. OVERLAY MARKS FOR REDUCING EFFECT OF BOTTOM LAYER ASYMMETRY simplified abstract

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OVERLAY MARKS FOR REDUCING EFFECT OF BOTTOM LAYER ASYMMETRY

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.


Inventor(s)

Hung-Chih Hsieh of Hsinchu (TW)

Kai-Hsiung Chen of New Taipei City (TW)

Po-Chung Cheng of Chiayi County (TW)

OVERLAY MARKS FOR REDUCING EFFECT OF BOTTOM LAYER ASYMMETRY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18356710 titled 'OVERLAY MARKS FOR REDUCING EFFECT OF BOTTOM LAYER ASYMMETRY

Simplified Explanation

The patent application describes methods of creating and using an overlay mark.

  • The overlay mark consists of an upper layer and a lower layer.
  • The lower layer contains two sets of compound gratings, each extending in the same direction.
  • The first set of compound gratings is located in one region of the overlay mark and consists of a first element and at least two second elements.
  • The second set of compound gratings is located in another region of the overlay mark and consists of a third element and at least two fourth elements.
  • The first set of compound gratings is a mirror image of the second set of compound gratings.


Original Abstract Submitted

Methods of fabricating and using an overlay mark are provided. In some embodiments, the overlay mark includes an upper layer and a lower layer disposed below the upper layer. The lower layer includes a first plurality of compound gratings extending in a first direction and disposed in a first region of the overlay mark, each of the first plurality of compound gratings including one first element and at least two second elements disposed on one side of the first element, and a second plurality of compound gratings extending the first direction and disposed in a second region of the overlay mark , each of the second plurality of compound gratings including one third element and at least two fourth elements on one side of the third element. The first plurality of compound gratings is a mirror image of the second plurality of compound gratings.

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