US Patent Application 18356694. CAPPING STRUCTURE TO REDUCE DARK CURRENT IN IMAGE SENSORS simplified abstract
Contents
CAPPING STRUCTURE TO REDUCE DARK CURRENT IN IMAGE SENSORS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Po-Chun Liu of Hsinchu City (TW)
Eugene Chen of Taipei City (TW)
CAPPING STRUCTURE TO REDUCE DARK CURRENT IN IMAGE SENSORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356694 titled 'CAPPING STRUCTURE TO REDUCE DARK CURRENT IN IMAGE SENSORS
Simplified Explanation
The patent application describes a method for forming a semiconductor device. Here are the key points:
- The method involves etching a substrate to create a recess on its surface.
- An epitaxial material is then formed within the recess.
- A capping structure is formed on top of the epitaxial material.
- A capping layer is added, extending beyond the outermost sidewall of the capping structure.
- Dopants are implanted into the epitaxial material, creating a first doped region with one type of doping and a second doped region with another type of doping.
Original Abstract Submitted
In some embodiments, a method for forming a semiconductor device is provided. The method includes etching a substrate to form a recess within a surface of the substrate. An epitaxial material is formed within the recess, a capping structure is formed on the epitaxial material, and a capping layer is formed onto the capping structure. The capping layer laterally extends past an outermost sidewall of the capping structure. Dopants are implanted into the epitaxial material. Implanting the dopants into the epitaxial material forms a first doped region having a first doping type and a second doped region having a second doping type.
