US Patent Application 18356636. Method of Manufacturing Semiconductor Devices simplified abstract
Contents
Method of Manufacturing Semiconductor Devices
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Gregory Michael Pitner of Sunnyvale CA (US)
Tse-An Chen of Taoyuan City (TW)
Method of Manufacturing Semiconductor Devices - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356636 titled 'Method of Manufacturing Semiconductor Devices
Simplified Explanation
- The patent application describes a semiconductor device and a method of manufacturing it using carbon nanotubes. - The method involves forming a stack of nanotubes and then using a non-destructive removal process to reduce the thickness of the stack. - The reduced stack of nanotubes can be used to create a device, such as a transistor. - The innovation lies in the use of carbon nanotubes and the non-destructive removal process to manufacture the semiconductor device. - The method offers potential advantages in terms of performance and efficiency compared to traditional semiconductor manufacturing techniques.
Original Abstract Submitted
A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
