US Patent Application 18356388. WAFER THINNING METHOD HAVING FEEDBACK CONTROL simplified abstract

WAFER THINNING METHOD HAVING FEEDBACK CONTROL

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yuan-Hsuan Chen of Tainan City (TW)

Kei-Wei Chen of Tainan City (TW)

Ying-Lang Wang of Tien-Chung Village (TW)

Kuo-Hsiu Wei of Tainan City (TW)

WAFER THINNING METHOD HAVING FEEDBACK CONTROL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18356388 titled 'WAFER THINNING METHOD HAVING FEEDBACK CONTROL

Simplified Explanation

The patent application describes a method for thinning a wafer.

• The initial thickness of the wafer is measured.
• A polishing time is calculated based on the initial thickness.
• The wafer is polished for the calculated polishing time to obtain a polished wafer.
• The polished thickness of the polished wafer is measured.
• An etching time is calculated based on the polished thickness.
• The polished wafer is etched for the calculated etching time to obtain an etched wafer.
• The etched wafer has a total thickness variation of less than or equal to 0.15 μm.

Original Abstract Submitted

A method of thinning a wafer includes measuring an initial thickness of the wafer. The method further includes calculating a polishing time using the initial thickness. The method further includes polishing the wafer for a first duration equal to the polishing time to obtain a polished wafer. The method further includes measuring a polished thickness of the polished wafer. The method further includes calculating an etching time using the polished thickness. The method further includes etching the polished wafer for a second duration equal to the etching time to obtain an etched wafer, wherein the wafer has a total thickness variation of less than or equal to 0.15 μm after etching the polished wafer.