US Patent Application 18356366. REFLECTION MODE PHOTOMASK simplified abstract
Contents
REFLECTION MODE PHOTOMASK
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Lang Chen of Hsinchu (TW)
Chih-Chiang Tu of Hsinchu (TW)
REFLECTION MODE PHOTOMASK - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356366 titled 'REFLECTION MODE PHOTOMASK
Simplified Explanation
The abstract describes a photomask that is used in reflection mode.
- The photomask consists of multiple layers on a substrate.
- It includes several absorber stacks, each consisting of an absorber layer and an anti-reflective coating (ARC) layer.
- The material used for the absorber layer can be either tantalum oxynitride or tantalum silicon oxynitride.
- The material used for the ARC layer can be either tantalum nitride or tantalum silicon.
Original Abstract Submitted
A reflection mode photomask includes a multilayer over a substrate. The reflection mode photomask further includes a plurality of absorber stacks over the multilayer. Each absorber stack of the plurality of absorber stacks includes an absorber layer, wherein a material of the absorber layer is selected from the group consisting of tantalum oxynitride and tantalum silicon oxynitride. Each absorber stack of the plurality of absorber stacks further includes an anti-reflective coating (ARC) layer on the absorber layer, wherein a material of the ARC layer is selected from the group consisting of tantalum nitride and tantalum silicon.
