US Patent Application 18356287. TERNARY PARAELECTRIC MATERIAL WITH SPACE GROUP CC AND METHOD OF MANUFACTURING THE SAME simplified abstract
TERNARY PARAELECTRIC MATERIAL WITH SPACE GROUP CC AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Hyeoncheol Park of Hwaseong-si (KR)
TERNARY PARAELECTRIC MATERIAL WITH SPACE GROUP CC AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356287 titled 'TERNARY PARAELECTRIC MATERIAL WITH SPACE GROUP CC AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
- The patent application describes a ternary paraelectric material with a Cc structure and a method of manufacturing it. - The material has a chemical formula of ABO and belongs to the monoclinic system with a space group No. 9. - The material has a dielectric constant ranging from 150 to 250. - "A" represents a Group 1 element, which can be Na, K, Li, or Rb. - "B" represents a Group 5 element, which can be Nb, V, or Ta. - One example of the material is NaNbO, which has a higher bandgap energy than STO (Strontium Titanate). - The material has a relative density of 90% or higher. - The patent application also includes a method for manufacturing the ternary paraelectric material with a Cc structure.
Original Abstract Submitted
A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of ABOthat has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The ABOmaterial may be NaNbOin which bandgap energy thereof is greater than that of STO. The ABOmaterial may have relative density that is greater than 90% or more.
