US Patent Application 18356180. MEMORY STACKS AND METHODS OF FORMING THE SAME simplified abstract
Contents
MEMORY STACKS AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tung-Ying Lee of Hsinchu City (TW)
Shao-Ming Yu of Hsinchu County (TW)
Yu-Chao Lin of Hsinchu City (TW)
MEMORY STACKS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356180 titled 'MEMORY STACKS AND METHODS OF FORMING THE SAME
Simplified Explanation
The abstract describes a memory stack and a method of forming it.
- The memory stack consists of a bottom electrode layer, a top electrode layer, and a phase change layer.
- The top electrode layer is wider than the phase change layer.
- A portion of the top electrode layer that is not covered by the phase change layer is rougher than the portion covered by it.
Original Abstract Submitted
Memory stacks and method of forming the same are provided. A memory stack includes a bottom electrode layer, a top electrode layer and a phase change layer between the bottom electrode layer and the top electrode layer. A width of the top electrode layer is greater than a width of the phase change layer. A first portion of the top electrode layer uncovered by the phase change layer is rougher than a second portion of the top electrode layer covered by the phase change layer.
