US Patent Application 18356168. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Georgios Vellianitis of Heverlee (BE)
Gerben Doornbos of Kessel-Lo (BE)
Marcus Johannes Henricus Van Dal of Linden (BE)
Mauricio Manfrini of Hsinchu County (TW)
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356168 titled 'SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor structure with a storage element layer and a selector.
- The selector is connected to the storage element layer and consists of multiple insulating layers and conductive layers.
- The insulating layers are stacked in a specific sequence, with the second insulating layer sandwiched between the first and third insulating layers.
- The first and third insulating layers have materials with a higher band gap compared to the material of the second insulating layer.
- The first conductive layer is connected to the first insulating layer, and the second conductive layer is connected to the third insulating layer.
Original Abstract Submitted
A semiconductor structure includes a storage element layer and a selector. The selector is electrically coupled to the storage element layer, and includes a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer and a second conductive layer. The first insulating layer, the second insulating layer and the third insulating layer are stacked up in sequence, wherein the second insulating layer is sandwiched in between the first insulating layer and the third insulating layer, and the first insulating layer and the third insulating layer include materials with higher band gap as compared with a material of the second insulating layer. The first conductive layer is connected to the first insulting layer, and the second conductive layer is connected to the third insulating layer.
