US Patent Application 18355889. PREVENTING GATE-TO-CONTACT BRIDGING BY REDUCING CONTACT DIMENSIONS IN FINFET SRAM simplified abstract

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PREVENTING GATE-TO-CONTACT BRIDGING BY REDUCING CONTACT DIMENSIONS IN FINFET SRAM

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.


Inventor(s)

Shih-Han Huang of Hsinchu City (TW)

Chih-Hung Hsieh of Hsin-Chu (TW)

PREVENTING GATE-TO-CONTACT BRIDGING BY REDUCING CONTACT DIMENSIONS IN FINFET SRAM - A simplified explanation of the abstract

This abstract first appeared for US patent application 18355889 titled 'PREVENTING GATE-TO-CONTACT BRIDGING BY REDUCING CONTACT DIMENSIONS IN FINFET SRAM

Simplified Explanation

The abstract describes a static random access memory (SRAM) cell design with specific features and arrangements of gates and contacts.

  • The SRAM cell includes two gates that extend in a certain direction, with a gap separating them.
  • There is a Vcc contact that also extends in the same direction, but it does not overlap with the gap between the gates.
  • A Vss contact, which is smaller than the Vcc contact, is also present and has a segment that is positioned to the gap between the gates.
  • The Vss contact is separated from the first gate by another gap in a perpendicular direction.

In summary, this patent application describes a specific configuration of gates and contacts in an SRAM cell design.


Original Abstract Submitted

A static random access memory (SRAM) cell includes a first gate and a second gate each extending in a first direction. A first gap separates the first gate from the second gate in the first direction. The SRAM cell includes a Vcc contact extending in the first direction. A second gap separates the Vcc contact and the first gate in a second direction perpendicular to the first direction. No segment of the Vcc contact overlaps with the first gap in the first direction. The SRAM cell includes a Vss contact extending in the first direction. A third gap separates the Vss contact from the first gate in the second direction. A segment of the Vss contact is disposed to the first gap. The Vss contact is smaller than the Vcc contact in the second direction.

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