US Patent Application 18355884. SLURRY ENHANCEMENT FOR POLISHING SYSTEM simplified abstract
Contents
SLURRY ENHANCEMENT FOR POLISHING SYSTEM
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chun-Hung Liao of Taichung (TW)
Huang-Lin Chao of Hillsboro OR (US)
SLURRY ENHANCEMENT FOR POLISHING SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18355884 titled 'SLURRY ENHANCEMENT FOR POLISHING SYSTEM
Simplified Explanation
- The patent application describes a method and apparatus for enhancing the oxidizability of a slurry used in a chemical mechanical polishing (CMP) process. - The method involves securing a substrate onto a carrier of a polishing system. - A first slurry is dispensed onto a polishing pad of the polishing system using a feeder. - The first slurry is then enhanced to increase its oxidizability, creating a second slurry. - The substrate is polished using the second slurry in the polishing process.
Original Abstract Submitted
The present disclosure describes a method and an apparatus that can enhance the slurry oxidizability for a chemical mechanical polishing (CMP) process. The method can include securing a substrate onto a carrier of a polishing system. The method can further include dispensing, via a feeder of the polishing system, a first slurry towards a polishing pad of the polishing system. The method can further include forming a second slurry by enhancing an oxidizability of the first slurry, and performing a polishing process, with the second slurry, on the substrate.
