US Patent Application 18355799. Passivation Structure with Planar Top Surfaces simplified abstract

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Passivation Structure with Planar Top Surfaces

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.


Inventor(s)

Yi-Hsiu Chen of Hsinchu (TW)

Wen-Chih Chiou of Zhunan Township (TW)

Chen-Hua Yu of Hsinchu (TW)

Passivation Structure with Planar Top Surfaces - A simplified explanation of the abstract

This abstract first appeared for US patent application 18355799 titled 'Passivation Structure with Planar Top Surfaces

Simplified Explanation

The patent application describes a method for forming layers on a surface to reveal a metal pad.

  • The method involves creating a first passivation layer on the surface.
  • A metal pad is then formed over the first passivation layer.
  • A planarization layer is added on top of the metal pad to create a smooth surface.
  • The planarization layer is patterned to create an opening, revealing the top surface of the metal pad.
  • A polymer layer is formed within the opening, extending into it.
  • The polymer layer is patterned to create a second opening, again revealing the top surface of the metal pad.


Original Abstract Submitted

A method includes forming a first passivation layer, forming a metal pad over the first passivation layer, forming a planarization layer having a planar top surface over the metal pad, and patterning the planarization layer to form a first opening. A top surface of the metal pad is revealed through the first opening. The method further includes forming a polymer layer extending into the first opening, and patterning the polymer layer to form a second opening. The top surface of the metal pad is revealed through the second opening.

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