US Patent Application 18355796. GATE AIR SPACER PROTECTION DURING SOURCE/DRAIN VIA HOLE ETCHING simplified abstract

GATE AIR SPACER PROTECTION DURING SOURCE/DRAIN VIA HOLE ETCHING

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Kuo-Chiang Tsai of Hsinchu City (TW)

Jyh-Huei Chen of Hsinchu City (TW)

GATE AIR SPACER PROTECTION DURING SOURCE/DRAIN VIA HOLE ETCHING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18355796 titled 'GATE AIR SPACER PROTECTION DURING SOURCE/DRAIN VIA HOLE ETCHING

Simplified Explanation

The patent application describes a semiconductor device with a gate, source/drain, and conductive contact.

• Gate is a component that controls the flow of electricity in the device.
• Source/drain is a region in the substrate where current enters or exits the device.
• Conductive contact is a structure that allows for electrical connection to the source/drain.
• An air spacer is placed between the gate and the conductive contact.
• The air spacer helps to improve the performance and efficiency of the device.
• A first component is placed over the gate, which could be another layer or structure.
• A second component is placed over the air spacer, which is different from the first component.
• The second component could be a different material or have a different function.
• This arrangement of components allows for improved functionality and performance of the semiconductor device.

Original Abstract Submitted

A semiconductor device includes a gate disposed over a substrate. A source/drain is disposed in the substrate. A conductive contact is disposed over the source/drain. An air spacer is disposed between the gate and the conductive contact. A first component is disposed over the gate. A second component is disposed over the air spacer. The second component is different from the first component.