US Patent Application 18355501. LEAKAGE REDUCTION BETWEEN TWO TRANSISTOR DEVICES ON A SAME CONTINUOUS FIN simplified abstract

LEAKAGE REDUCTION BETWEEN TWO TRANSISTOR DEVICES ON A SAME CONTINUOUS FIN

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chun-Yen Lin of Hsinchu City (TW)

Bao-Ru Young of Zhubei City (TW)

Tung-Heng Hsieh of Zhudong Township (TW)

LEAKAGE REDUCTION BETWEEN TWO TRANSISTOR DEVICES ON A SAME CONTINUOUS FIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 18355501 titled 'LEAKAGE REDUCTION BETWEEN TWO TRANSISTOR DEVICES ON A SAME CONTINUOUS FIN

Simplified Explanation

The patent application describes a method for fabricating a semiconductor device with improved performance.

• The method involves removing portions of a substrate to create a continuous fin structure on the surface of the substrate.
• A doping process is then used to increase the concentration of dopants in a specific portion of the fin.
• Gate electrodes are formed over different portions of the fin, with a dummy gate electrode placed in between two other gate electrodes.
• Upper portions of the fin between the gate electrodes and the dummy gate electrode are removed.
• Source/drain regions are then formed between the gate electrodes and the dummy gate electrode.

Original Abstract Submitted

In some embodiments, the present disclosure relates to a method that includes removing portions of a substrate to form a continuous fin protruding from an upper surface of the substrate. A doping process is performed to selectively increase a dopant concentration of a first portion of the continuous fin. A first gate electrode is formed over a second portion of the continuous fin, and a second gate electrode is formed over a third portion of the continuous fin. The first portion of the continuous fin is between the second and third portions of the continuous fin. A dummy gate electrode is formed over the first portion of the continuous fin. Upper portions of the continuous fin that are arranged between the first gate electrode, the second gate electrode, and the dummy gate electrode are removed, and source/drain regions are formed between the first, the second, and the dummy gate electrodes.