US Patent Application 18355385. MEMORY DEVICE simplified abstract

MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yen-Lin Huang of Menlo Park CA (US)

Ming-Yuan Song of Hsinchu City (TW)

Chien-Min Lee of Hsinchu County (TW)

Shy-Jay Lin of Hsinchu County (TW)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18355385 titled 'MEMORY DEVICE

Simplified Explanation

The patent application describes a memory device that includes a substrate, a spin-orbit torque layer, and a magnetic tunneling junction (MTJ).

• The memory device is designed to store and retrieve data.
• The MTJ is stacked with the spin-orbit torque layer over the substrate.
• The MTJ includes a synthetic free layer, a barrier layer, and a reference layer.
• The synthetic free layer consists of a synthetic antiferromagnetic structure, a first spacer layer, and a free layer.
• The synthetic antiferromagnetic structure is located between the spin-orbit torque layer and the free layer.
• The barrier layer is positioned beside the synthetic free layer.
• The reference layer is positioned beside the barrier layer.

Original Abstract Submitted

A memory device is provided. The memory device includes a substrate, a spin-orbit torque layer and a magnetic tunneling junction (MTJ). The MTJ stacks with the spin-orbit torque layer over the substrate and includes a synthetic free layer, a barrier layer and a reference layer. The synthetic free layer includes a synthetic antiferromagnetic structure, a first spacer layer and a free layer, wherein the synthetic antiferromagnetic structure is disposed between the spin-orbit torque layer and the free layer. The barrier layer is disposed beside the synthetic free layer. The reference layer is disposed beside the barrier layer.