US Patent Application 18355143. ISOLATION STRUCTURE FOR PREVENTING UNINTENTIONAL MERGING OF EPITAXIALLY GROWN SOURCE/DRAIN simplified abstract
Contents
ISOLATION STRUCTURE FOR PREVENTING UNINTENTIONAL MERGING OF EPITAXIALLY GROWN SOURCE/DRAIN
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kuan-Lin Yeh of Hsinchu City (TW)
Kuo-Hua Pan of Hsinchu City (TW)
ISOLATION STRUCTURE FOR PREVENTING UNINTENTIONAL MERGING OF EPITAXIALLY GROWN SOURCE/DRAIN - A simplified explanation of the abstract
This abstract first appeared for US patent application 18355143 titled 'ISOLATION STRUCTURE FOR PREVENTING UNINTENTIONAL MERGING OF EPITAXIALLY GROWN SOURCE/DRAIN
Simplified Explanation
- The patent application describes a semiconductor device that includes two active regions and a substrate. - The device has a first source/drain component grown on the first active region and a second source/drain component grown on the second active region. - An interlayer dielectric (ILD) is placed around both source/drain components. - An isolation structure is present within the ILD, separating the first and second source/drain components. - The purpose of the invention is to provide a structure that allows for efficient isolation of different source/drain components in a semiconductor device.
Original Abstract Submitted
A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.
