US Patent Application 18355073. Gate Air Spacer for Fin-Like Field Effect Transistor simplified abstract
Contents
Gate Air Spacer for Fin-Like Field Effect Transistor
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chien-Ning Yao of Hsinchu (TW)
Sai-Hooi Yeong of Hsinchu County (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
Chih-Hao Wang of Hsinchu County (TW)
Gate Air Spacer for Fin-Like Field Effect Transistor - A simplified explanation of the abstract
This abstract first appeared for US patent application 18355073 titled 'Gate Air Spacer for Fin-Like Field Effect Transistor
Simplified Explanation
- The patent application describes gates with air gaps and methods of making them. - The gates consist of a gate electrode and a gate dielectric. - There are two air gaps present, one between the gate electrode and the gate dielectric on the first sidewall, and another between the gate electrode and the gate dielectric on the second sidewall. - A dielectric cap is placed over the gate electrode, covering the top and filling the top portions of both air gaps. - The gates are positioned between two epitaxial source/drain regions. - The width of the gate is the same as the distance between the two epitaxial source/drain regions.
Original Abstract Submitted
Gates having air gaps therein, and methods of fabrication thereof, are disclosed herein. An exemplary gate includes a gate electrode and a gate dielectric. A first air gap is between and/or separates a first sidewall of the gate electrode from the gate dielectric, and a second air gap is between and/or separates a second sidewall of the gate electrode from the gate dielectric. A dielectric cap may be disposed over the gate electrode, and the dielectric cap may wrap a top of the gate electrode. The dielectric cap may fill a top portion of the first air gap and a top portion of the second air gap. The gate may be disposed between a first epitaxial source/drain and a second epitaxial source/drain, and a width of the gate is about the same as a distance between the first epitaxial source/drain and the second epitaxial source/drain.
