US Patent Application 18354844. METHOD OF FORMING A DUMMY FIN BETWEEN FIRST AND SECOND SEMICONDUCTOR FINS simplified abstract
Contents
METHOD OF FORMING A DUMMY FIN BETWEEN FIRST AND SECOND SEMICONDUCTOR FINS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shih-Yao Lin of New Taipei (TW)
METHOD OF FORMING A DUMMY FIN BETWEEN FIRST AND SECOND SEMICONDUCTOR FINS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18354844 titled 'METHOD OF FORMING A DUMMY FIN BETWEEN FIRST AND SECOND SEMICONDUCTOR FINS
Simplified Explanation
- The patent application describes an embodiment device that includes a first source/drain region and a dummy fin adjacent to it. - The dummy fin consists of a first portion and a second portion. - The second portion is made up of a second film and a third film, which is different from the materials used in the first film and the second film. - The width of the second portion is smaller than the width of the first portion. - The device also includes a gate stack along the sidewalls of the dummy fin.
Original Abstract Submitted
An embodiment device includes a first source/drain region over a semiconductor substrate and a dummy fin adjacent the first source/drain region. The dummy fin comprising: a first portion comprising a first film and a second portion over the first portion, wherein the second portion comprises: a second film; and a third film. The third film is between the first film and the second film, and the third film is made of a different material than the first film and the second film. A width of the second portion is less than a width of the first portion. The device further comprises a gate stack along sidewalls of the dummy fin.
