US Patent Application 18354842. INTEGRATED CHIP INDUCTOR STRUCTURE simplified abstract

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INTEGRATED CHIP INDUCTOR STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Hung-Wen Hsu of Tainan City (TW)

Po-Han Huang of Tainan City (TW)

Wei-Li Huang of Pingtung City (TW)

INTEGRATED CHIP INDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18354842 titled 'INTEGRATED CHIP INDUCTOR STRUCTURE

Simplified Explanation

The patent application is about an inductor structure that includes a magnetic structure and a pattern enhancement layer.

  • The inductor structure has an etch stop layer, an interconnect structure, and a substrate.
  • The magnetic structure is made up of multiple layers and is placed over the etch stop layer.
  • The bottommost layer of the magnetic structure is wider than the topmost layer.
  • There are two parallel conductive wires that extend over the magnetic structure.
  • The magnetic structure is designed to modify the magnetic fields generated by the conductive wires.
  • A pattern enhancement layer is placed between the bottommost layer of the magnetic structure and the etch stop layer.
  • The pattern enhancement layer has a certain thickness, while the bottommost layer of the magnetic structure has a smaller thickness.


Original Abstract Submitted

The present disclosure relates to, in part, an inductor structure that includes an etch stop layer arranged over an interconnect structure overlying a substrate. A magnetic structure includes a plurality of stacked layers is arranged over the etch stop layer. The magnetic structure includes a bottommost layer that is wider than a topmost layer. A first conductive wire and a second conductive wire extend in parallel over the magnetic structure. The magnetic structure is configured to modify magnetic fields generated by the first and second conductive wires. A pattern enhancement layer is arranged between the bottommost layer of the magnetic structure and the etch stop layer. The pattern enhancement layer has a first thickness, and the bottommost layer of the magnetic structure has a second thickness that is less than the first thickness.

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