US Patent Application 18354667. MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

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MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Meng-Han Lin of Hsinchu (TW)

Han-Jong Chia of Hsinchu City (TW)

Feng-Cheng Yang of Hsinchu County (TW)

Bo-Feng Young of Taipei (TW)

Nuo Xu of San Jose CA (US)

Sai-Hooi Yeong of Hsinchu County (TW)

Yu-Ming Lin of Hsinchu City (TW)

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18354667 titled 'MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a memory device with several components, including a word line, a source line, a bit line, a memory layer, and a channel material layer.

  • The word line extends in one direction and has liner layers on its sidewall.
  • The memory layer is located between the liner layers on the sidewall of the word line and extends along the sidewalls in the same direction.
  • The liner layers are spaced apart by the memory layer and are sandwiched between the memory layer and the word line.
  • The channel material layer is on the sidewall of the memory layer.
  • A dielectric layer is on the sidewall of the channel material layer.
  • The source line and the bit line are on opposite sides of the dielectric layer and are located on the sidewall of the channel material layer.
  • The source line and the bit line extend in a direction perpendicular to the first direction.
  • The material of the liner layers has a lower dielectric constant compared to the material of the memory layer.


Original Abstract Submitted

A memory device including a word line, a source line, a bit line, a memory layer, a channel material layer is described. The word line extends in a first direction, and liner layers disposed on a sidewall of the word line. The memory layer is disposed on the sidewall of the word line between the liner layers and extends along sidewalls of the liner layers in the first direction. The liner layers are spaced apart by the memory layer, and the liner layers are sandwiched between the memory layer and the word line. The channel material layer is disposed on a sidewall of the memory layer. A dielectric layer is disposed on a sidewall of the channel material layer. The source line and the bit line are disposed at opposite sides of the dielectric layer and disposed on the sidewall of the channel material layer. The source line and the bit line extend in a second direction perpendicular to the first direction. A material of the liner layers has a dielectric constant lower than that of a material of the memory layer.

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