US Patent Application 18354633. PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract

PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Tsung-Fu Tsai of Changhua County (TW)

Shih-Ting Lin of Taipei City (TW)

Szu-Wei Lu of Hsinchu City (TW)

Chen-Hsuan Tsai of Taitung City (TW)

I-Ting Huang of Kaohsiung City (TW)

PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18354633 titled 'PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a package structure for electronic devices.

• The structure includes a redistribution circuit structure, a wiring substrate, an insulating encapsulation, and a reinforcement structure.
• The redistribution circuit structure has dielectric layers.
• The wiring substrate is placed on top of the redistribution circuit structure.
• The insulating encapsulation surrounds the wiring substrate.
• The reinforcement structure consists of reinforcement pattern layers and reinforcement vias.
• The reinforcement pattern layers and dielectric layers are stacked alternately.
• The reinforcement vias penetrate through the dielectric layers to connect the reinforcement pattern layers.
• At least one of the reinforcement pattern layers is embedded in the insulating encapsulation.
• The reinforcement structure is electrically floating, meaning it is not connected to any electrical circuit.

Original Abstract Submitted

A package structure includes a redistribution circuit structure, a wiring substrate, an insulating encapsulation, and a reinforcement structure. The redistribution circuit structure has dielectric layers. The wiring substrate is disposed on the redistribution circuit structure. The insulating encapsulation laterally encapsulates the wiring substrate. The reinforcement structure includes reinforcement pattern layers and reinforcement vias. The reinforcement pattern layers and the dielectric layers are stacked alternately. The reinforcement vias penetrate through the dielectric layers to connect the reinforcement pattern layers. At least one of the reinforcement pattern layers is embedded in the insulating encapsulation. The reinforcement structure is electrically floating.