US Patent Application 18354423. INTEGRATED CIRCUIT, SYSTEM FOR AND METHOD OF FORMING AN INTEGRATED CIRCUIT simplified abstract
Contents
INTEGRATED CIRCUIT, SYSTEM FOR AND METHOD OF FORMING AN INTEGRATED CIRCUIT
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jung-Chan Yang of Hsinchu (TW)
Ting-Wei Chiang of Hsinchu (TW)
Hui-Zhong Zhuang of Hsinchu (TW)
Stefan Rusu of Sunnyvale CA (US)
INTEGRATED CIRCUIT, SYSTEM FOR AND METHOD OF FORMING AN INTEGRATED CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18354423 titled 'INTEGRATED CIRCUIT, SYSTEM FOR AND METHOD OF FORMING AN INTEGRATED CIRCUIT
Simplified Explanation
The patent application describes an integrated circuit structure with multiple power rails and sets of conductive structures at different levels.
- The integrated circuit structure includes three power rails extending in one direction.
- There are three sets of conductive structures located at a second level, extending in a different direction.
- Additionally, there are three conductive structures located at a third level, also extending in the same direction as the second set.
- Each conductive structure at the third level overlaps with a corresponding conductive structure from the second set.
Original Abstract Submitted
An integrated circuit structure includes a first, second and third power rail extending in a first direction, a first, second and third set of conductive structures extending in the second direction, and being located at a second level, and a first, second and third conductive structure extending in the second direction, and being located at a third level. The first conductive structure overlaps a first conductive structure of the corresponding first, second and third set of conductive structures. The second conductive structure overlaps a second conductive structure of the corresponding first, second and third set of conductive structures. The third conductive structure overlaps a third conductive structure of the corresponding first, second and third set of conductive structures.
