US Patent Application 18354377. INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME simplified abstract

INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

John Lin of Hsinchu (TW)

Chin-Shen Lin of Hsinchu (TW)

Kuo-Nan Yang of Hsinchu (TW)

Chung-Hsing Wang of Hsinchu (TW)

INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18354377 titled 'INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a method of forming an integrated circuit.

• The method involves forming a set of devices in a substrate and then creating an interconnect structure over these devices.
• A set of conductive structures is then deposited on the interconnect structure.
• The devices in the circuit are designed to operate on a specific supply voltage.
• The interconnect structure is formed by depositing insulating layers, etching them to create trenches, and filling these trenches with a conductive material to form metal layers.
• A header circuit is also formed between two metal layers, which is responsible for providing the supply voltage to the devices in the circuit.

Original Abstract Submitted

A method of forming an integrated circuit includes forming at least a first or a second set of devices in a substrate, forming an interconnect structure over the first or second set of devices, and depositing a set of conductive structures on the interconnect structure. The first and second set of devices are configured to operate on a first supply voltage. Forming the interconnect structure includes depositing a set of insulating layers over the first or second set of devices, etching the set of insulating layers thereby forming a set of trenches, depositing a conductive material within the set of trenches, thereby forming a set of metal layers, and forming a portion of a header circuit between a first and a second metal layer. The header circuit is configured to provide the first supply voltage to the first set of devices.