US Patent Application 18354331. TOPOLOGICAL SEMI-METAL INTERCONNECTS simplified abstract
Contents
TOPOLOGICAL SEMI-METAL INTERCONNECTS
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Ching-Tzu Chen of Ossining NY (US)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
Vijay Narayanan of New York NY (US)
Takeshi Nogami of Schenectady NY (US)
TOPOLOGICAL SEMI-METAL INTERCONNECTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18354331 titled 'TOPOLOGICAL SEMI-METAL INTERCONNECTS
Simplified Explanation
The patent application describes a method for fabricating an interconnect.
- The method involves creating a layer of topological semi-metal.
- The topological semi-metal layer is then patterned to form one or more interconnects.
- A dielectric layer is formed between the interconnects.
- A hermetic dielectric cap layer is formed on top of the interconnects and the dielectric layer.
Original Abstract Submitted
Provided is a method for fabricating an interconnect. The method comprises forming a topological semi-metal layer. The method further comprises patterning the topological semi-metal layer to form one or more interconnects. The method further comprises forming a dielectric layer between the one or more interconnects. The method further comprises forming a hermetic dielectric cap layer on top of the one or more interconnects and the dielectric layer.
