US Patent Application 18354068. SEMICONDUCTOR DEVICE INCLUDING THROUGH VIA STRUCTURE simplified abstract
Contents
SEMICONDUCTOR DEVICE INCLUDING THROUGH VIA STRUCTURE
Organization Name
Inventor(s)
Sonkwan Hwang of Suwon-si (KR)
Kwangjin Moon of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE INCLUDING THROUGH VIA STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18354068 titled 'SEMICONDUCTOR DEVICE INCLUDING THROUGH VIA STRUCTURE
Simplified Explanation
The patent application describes a semiconductor device with multiple metal wiring layers stacked on a semiconductor substrate and an integrated circuit layer.
- The device includes through via structures that pass through the semiconductor substrate.
- The through via structures are connected to different metal wiring layers.
- The through via structures allow for vertical connections between the metal wiring layers and the semiconductor substrate.
- The invention aims to provide a simplified and efficient design for semiconductor devices.
Original Abstract Submitted
A semiconductor device including a semiconductor substrate, an integrated circuit layer on the semiconductor substrate, first to nmetal wiring layers (where n is a positive integer) sequentially stacked on the semiconductor substrate and the integrated circuit layer, a first through via structure extending in a vertical direction toward the semiconductor substrate from a first via connection metal wiring layer, which is one of the second to nmetal wiring layers other than the first metal wiring layer, and passing through the semiconductor substrate, and a second through via structure being apart from the first through via structure, extending in a vertical direction toward the semiconductor substrate from a second via connection metal wiring layer, which is one of the second to nmetal wiring layers other than the first metal wiring layer, and passing through the semiconductor substrate may be provided.
