US Patent Application 18353972. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THEREOF simplified abstract
Contents
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sheng-Chih Lai of Hsinchu County (TW)
Feng-Cheng Yang of Zhudong Township (TW)
Chung-Te Lin of Tainan City (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18353972 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THEREOF
Simplified Explanation
The abstract describes a semiconductor structure and a method for fabricating it.
- The semiconductor structure includes a substrate and a stacked structure on the substrate.
- The stacked structure consists of insulating layers and gate members stacked alternately.
- A core structure is present within the stacked structure.
- The core structure comprises a memory layer, a channel member, a contact member, and a liner member.
- The channel member is located on top of the memory layer.
- The contact member is positioned on top of the channel member.
- The liner member surrounds a portion of the core structure.
Original Abstract Submitted
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate and a stacked structure disposed on the substrate. The stacked structure includes multiple alternately stacked insulating layers and gate members. A core structure is disposed in the stacked structure. The core structure includes a memory layer, a channel member, a contact member, and a liner member. The channel member is disposed on the memory layer. The contact member is disposed on the channel member. The liner member surrounds a portion of the core structure. The present disclosure also provides a method for fabricating the semiconductor structure.
