US Patent Application 18353498. Semiconductor Device and Method of Forming the Same simplified abstract
Contents
Semiconductor Device and Method of Forming the Same
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chia-Ming Chang of Hsinchu (TW)
Cheng-Chien Li of Jhubei City (TW)
Hsin-Chieh Huang of Hsinchu (TW)
Semiconductor Device and Method of Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18353498 titled 'Semiconductor Device and Method of Forming the Same
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate, a semiconductor fin, and an epitaxy structure.
- The semiconductor fin is located on the substrate and has at least one recess.
- The epitaxy structure is present in the recess of the semiconductor fin.
- The epitaxy structure consists of a topmost portion, a first portion, and a second portion arranged in a specific direction.
- The first portion of the epitaxy structure has a higher percentage of germanium atoms compared to the topmost portion and the second portion.
Original Abstract Submitted
A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.
