US Patent Application 18353246. DOUBLE-SIDED STACKED DTC STRUCTURE simplified abstract

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DOUBLE-SIDED STACKED DTC STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Ming Chyi Liu of Hsinchu City (TW)

DOUBLE-SIDED STACKED DTC STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18353246 titled 'DOUBLE-SIDED STACKED DTC STRUCTURE

Simplified Explanation

The patent application describes an integrated circuit (IC) design that includes multiple layers and structures for improved performance and functionality.

  • The IC includes a first insulating layer with a metal interconnect structure and a bottom die.
  • A substrate is placed above the first insulating layer.
  • A second metal interconnect structure is positioned above the substrate.
  • A through-substrate via (TSV) directly connects the first and second metal interconnect structures, allowing for efficient communication between them.
  • The IC also features a stacked deep trench capacitor (DTC) structure within the substrate.
  • The DTC structure consists of two sets of trenches extending from opposite sides of the substrate.
  • These trenches provide additional capacitance, which is crucial for storing and supplying electrical energy in the IC.
  • The design aims to enhance the performance and efficiency of the IC by optimizing the interconnectivity and capacitance within the circuit.


Original Abstract Submitted

In some embodiments, the present disclosure relates to an integrated circuit (IC), including a first insulating layer which includes a first metal interconnect structure stacked above a bottom die. Including a substrate disposed above the first insulating layer, a second metal interconnect structure disposed above the substrate, a through-substrate via (TSV) directly connecting the first metal interconnect structure to the second metal interconnect structure, and a stacked deep trench capacitor (DTC) structure disposed in the substrate. The DTC structure includes a first plurality of trenches extending from a first side of the substrate and a second plurality of trenches extending from a second side of the substrate.

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