US Patent Application 18353214. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jonghan Lee of Namyangju-si (KR)
HyungSuk Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18353214 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes semiconductor devices and methods of manufacturing them.
- The semiconductor device includes two transistors, each consisting of multiple vertically stacked semiconductor patterns on a substrate.
- A gate dielectric pattern and a work function pattern fill the space between the semiconductor patterns in each transistor.
- The work function pattern of the first transistor includes a first work function metal layer.
- The work function pattern of the second transistor includes both the first work function metal layer and a second work function metal layer.
- The first work function metal layer in both transistors has a higher work function than the second work function metal layer.
- The first transistor has a lower threshold voltage than the second transistor.
Original Abstract Submitted
Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.
