US Patent Application 18352872. MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Zong-You Luo of Taoyuan City (TW)
Ya-Jui Tsou of Taichung City (TW)
Chee-Wee Liu of Taipei City (TW)
Shao-Yu Lin of Taichung City (TW)
Liang-Chor Chung of Hsinchu County (TW)
Chih-Lin Wang of Hsinchu County (TW)
MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18352872 titled 'MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The patent application describes a method for forming conductive lines and magnetic tunnel junction (MTJ) stacks on a wafer.
- The method involves forming bottom conductive lines on the wafer.
- A first MTJ stack is then formed over the bottom conductive lines.
- Middle conductive lines are formed over the first MTJ stack.
- A second MTJ stack is formed over the middle conductive lines.
- Finally, top conductive lines are formed over the second MTJ stack.
Original Abstract Submitted
A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.
