US Patent Application 18352632. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE simplified abstract
Contents
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
Organization Name
Murata Manufacturing Co., Ltd.
Inventor(s)
Fuminori Morisawa of Kyoto (JP)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18352632 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
Simplified Explanation
The patent application describes a semiconductor device and module that improve heat dissipation in a semiconductor device with a heat generating element.
- The semiconductor device includes a P-type semiconductor substrate with a main surface and an opposing main surface.
- An N-type N well is provided on the main surface side of the semiconductor substrate.
- A unit field effect transistor is located within the N well.
- A P-type heat dissipation guard ring region is positioned on the main surface side of the semiconductor substrate, outside of the N well.
- Wiring is provided on the heat dissipation guard ring region.
- Bump placement portions and bumps are also included in the device.
Original Abstract Submitted
To provide a semiconductor device and a semiconductor module that are capable of improving a heat dissipation property in the semiconductor device including a heat generating element. A semiconductor device includes: a P-type semiconductor substrate, which has a main surface and a main surface opposed to the main surface; an N-type N well, which is provided on the main surface side of the semiconductor substrate; a unit field effect transistor, which is provided in the N well; a P-type heat dissipation guard ring region, which is provided on the main surface side of the semiconductor substrate on the outside of the N well in plan view of the semiconductor substrate; wiring, which is provided on the heat dissipation guard ring region; bump placement portions; and bumps.
