US Patent Application 18352299. RUTHENIUM OXIDE FILM AND RUTHENIUM LINER FOR LOW-RESISTANCE COPPER INTERCONNECTS IN A DEVICE simplified abstract

RUTHENIUM OXIDE FILM AND RUTHENIUM LINER FOR LOW-RESISTANCE COPPER INTERCONNECTS IN A DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Shu-Cheng Chin of Hsinchu City (TW)

RUTHENIUM OXIDE FILM AND RUTHENIUM LINER FOR LOW-RESISTANCE COPPER INTERCONNECTS IN A DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18352299 titled 'RUTHENIUM OXIDE FILM AND RUTHENIUM LINER FOR LOW-RESISTANCE COPPER INTERCONNECTS IN A DEVICE

Simplified Explanation

- The patent application is about using selective ruthenium and selective ruthenium oxide in the manufacturing process of electronic devices. - These materials are used in the formation of BEOL metallization layers and vias. - The purpose of using selective ruthenium is to achieve low contact resistance and low sheet resistance for the metallization layers and vias. - It also helps in promoting adhesion between different layers and materials in the metallization layers and vias. - Additionally, using selective ruthenium can help reduce or eliminate defects like voids and discontinuities in the metallization layers and vias.

Original Abstract Submitted

Selective ruthenium and selective ruthenium oxide may be used in single damascene processes and/or dual damascene processes to form BEOL metallization layers and vias of an electronic device. A selective ruthenium liner may be formed to achieve a low contact resistance and a low sheet resistance for the BEOL metallization layers and vias, to promote adhesion between the various layers and materials in the BEOL metallization layers and vias, and/or to reduce or eliminate defects (such as voids and discontinuities) in the BEOL metallization layers and vias.