US Patent Application 18352249. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
Contents
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ang-Sheng Chou of Hsinchu (TW)
Hung-Li Chiang of TaipeiCity (TW)
Tzu-Chiang Chen of Hsinchu City (TW)
Chao-Ching Cheng of Hsinchu City (TW)
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18352249 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device and a method for manufacturing it.
- The device includes a heat transfer layer, a channel material layer, a gate structure, and source and drain terminals.
- The heat transfer layer is placed on a substrate.
- The channel material layer has two surfaces, with the first surface in contact with the heat transfer layer.
- The gate structure is positioned above the channel material layer.
- The source and drain terminals are in contact with the channel material layer and located on opposite sides of the gate structure.
Original Abstract Submitted
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a heat transfer layer disposed over a substrate, a channel material layer, a gate structure and source and drain terminals. The channel material layer has a first surface and a second surface opposite to the first surface, and the channel material layer is disposed on the heat transfer layer with the first surface in contact with the heat transfer layer. The gate structure is disposed above the channel material layer. The source and drain terminals are in contact with the channel material layer and located at two opposite sides of the gate structure.
