US Patent Application 18352230. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Chao-Ching Cheng of Hsinchu City (TW)

Chun-Chieh Lu of Taipei City (TW)

Hung-Li Chiang of Taipei City (TW)

Tzu-Chiang Chen of Hsinchu City (TW)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18352230 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a semiconductor device with several components: a substrate, a poly-material pattern, a conductive element, a semiconductor layer, and a gate structure.

  • The poly-material pattern is located on top of the substrate and extends outward. It consists of an active portion and a poly-material portion that is connected to the active portion.
  • The conductive element is positioned on the substrate and includes the poly-material portion of the poly-material pattern. It also has a metallic conductive portion that covers either the top surface or the sidewall of the poly-material portion.
  • The semiconductor layer is placed on top of the substrate and covers both the active portion of the poly-material pattern and the conductive element.
  • The gate structure is located on top of the semiconductor layer and is positioned within the active portion of the poly-material pattern.


Original Abstract Submitted

A semiconductor device includes a substrate, a first poly-material pattern, a first conductive element, a first semiconductor layer, and a first gate structure. The first poly-material pattern is over and protrudes outward from the substrate, wherein the first poly-material pattern includes a first active portion and a first poly-material portion joined to the first active portion. The first conductive element is over the substrate, wherein the first conductive element includes the first poly-material portion and a first metallic conductive portion covering at least one of a top surface and a sidewall of the first poly-material portion. The first semiconductor layer is over the substrate and covers the first active portion of the first poly-material pattern and the first conductive element. The first gate structure is over the first semiconductor layer located within the first active portion.

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